Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy

W. Liang; Kong-Thon Tsen; David K. Ferry; Hai Lu; William J. Schaff

doi:10.1117/12.592971

13 April 2005 Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy

W. Liang, Kong-Thon Tsen, David K. Ferry, Hai Lu, William J. Schaff

Proceedings Volume 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX; (2005) https://doi.org/10.1117/12.592971
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Non-equilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the bandgap of InN cannot be around 1.89 eV; but are consistent with a bandgap of around 0.8 eV. In addition, they disprove the idea that 0.8 eV-luminescence observed recently in InN is due to deep level radiative emission in InN.

Citation Download Citation

W. Liang, Kong-Thon Tsen, David K. Ferry, Hai Lu, and William J. Schaff "Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); https://doi.org/10.1117/12.592971

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