Near-field and far-field dynamics of (Al,In)GaN laser diodes

Ulrich T. Schwarz; Markus Pindl

doi:10.1117/12.591044

1 April 2005 Near-field and far-field dynamics of (Al,In)GaN laser diodes

Ulrich T. Schwarz, Markus Pindl

Author Affiliations +

Proceedings Volume 5738, Novel In-Plane Semiconductor Lasers IV; (2005) https://doi.org/10.1117/12.591044
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

For blue (Al,In)GaN laser diodes we measure the evolution of the laser beam during its propagation from near-field to far-field. We reconstruct the near-field phase distribution of the waveguide mode. The dynamic behaviour is a tilting of the phase front and a far-field beam-steering on a 10 ns to 100 ns time scale. These observations are discussed in the context of the carrier induced change of the refractive index associated with the antiguiding factor and of thermal dynamics.

Citation Download Citation

Ulrich T. Schwarz and Markus Pindl "Near-field and far-field dynamics of (Al,In)GaN laser diodes", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); https://doi.org/10.1117/12.591044

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