Paper
9 July 1986 GaAs Integrated Laser And Electronic Circuit Technology
F. Brillouet, A. Clei, N. Bouadma, R. Lefevre, R. Azoulay, F. Alexandre, N. Duhamel
Author Affiliations +
Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951216
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
Abstract
The integration technology of a ridge AlGaAs/GaAs waveguide laser grown by MOCVD and of a microelectronic circuit is described in two different configurations: a selective and a non-selective laser layers growth. The critical steps of the respective processes are then compared.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Brillouet, A. Clei, N. Bouadma, R. Lefevre, R. Azoulay, F. Alexandre, and N. Duhamel "GaAs Integrated Laser And Electronic Circuit Technology", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951216
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KEYWORDS
Field effect transistors

Epitaxy

Laser applications

Gallium arsenide

Etching

Photoresist materials

Laser damage threshold

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