Modification of the optical and electrical properties of quantum dot infrared photodetector (QDIP) by thermal treatment

J. C. Shin; W. J. Choi; J. D. Song; J. I. Lee; J. W. Choe

doi:10.1117/12.618465

12 September 2005 Modification of the optical and electrical properties of quantum dot infrared photodetector (QDIP) by thermal treatment

J. C. Shin, W. J. Choi, J. D. Song, J. I. Lee, J. W. Choe

Author Affiliations +

Proceedings Volume 5881, Infrared and Photoelectronic Imagers and Detector Devices; 58810W (2005) https://doi.org/10.1117/12.618465
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

In this study, we have studied the thermal treatment effect not only on the optical and structural properties of QDIP structure but also device performance of the QDIP. The thermal treatment of InAs/GaAs QDIP structure have been carried out at the temperature range from 650^oC and 850^oC with SiO₂ capping layer for 1 minute under the N₂-gas ambient. After the thermal treatment, the structure was processed to QDIP and its device characteristics such as dark current and IR photo-response were measured. Results show that the photoluminescence (PL) peak was blue-shifted from 1288nm to 1167nm while the peak of photo-currents spectrum was red-shifted from 7.6 um to 7.8 um after the thermal treatment. It is also noted that the thermally treated sample showed the increase of photo-currents, which resulted in the increase of detectivity.

Citation Download Citation

J. C. Shin, W. J. Choi, J. D. Song, J. I. Lee, and J. W. Choe "Modification of the optical and electrical properties of quantum dot infrared photodetector (QDIP) by thermal treatment", Proc. SPIE 5881, Infrared and Photoelectronic Imagers and Detector Devices, 58810W (12 September 2005); https://doi.org/10.1117/12.618465

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