George Cirlin,1,2,3 Alexander Tonkikh,1,2,3 Vadim Talalaev,3,4 Nikolai Zakharov,3 Peter Werner3
1Institute for Analytical Instrumentation (Russia) 2A.F. Ioffe Physico-Technical Institute (Russia) 3Max-Planck-Institut für Mikrostrukturphysik (Germany) 4St. Petersburg State Univ. (Russia)
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Quantum-dot Si/Ge superlattice structures with the Ge amount slightly above the critical for island formation are
prepared by molecular beam epitaxy. The structures grown under optimized conditions are defect-free. Their structural
and optical properties are described. A significant increase in the RT luminescence efficiency is obtained by adjusting
such parameters as the growth temperature, growth rate of Ge, the number of the Ge quantum-dot sheets, their thickness,
the level of Sb doping at specific planes, and the thickness of Si spacers. An intensive RT electroluminescence from the
structures in the fiber optic communications 1.6-μm range is demonstrated. The approach opens new routes to the
fabrication of Si-based RT light emitters.
George Cirlin,Alexander Tonkikh,Vadim Talalaev,Nikolai Zakharov, andPeter Werner
"Si/Ge multilayer structures for optoelectronic applications", Proc. SPIE 5946, Optical Materials and Applications, 594610 (13 June 2006); https://doi.org/10.1117/12.639339
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
George Cirlin, Alexander Tonkikh, Vadim Talalaev, Nikolai Zakharov, Peter Werner, "Si/Ge multilayer structures for optoelectronic applications," Proc. SPIE 5946, Optical Materials and Applications, 594610 (13 June 2006); https://doi.org/10.1117/12.639339