MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures

Sergey A. Dvoretsky; Vasiliy S. Varavin; Nikolay N. Mikhailov; Yuri G. Sidorov; Tamara I. Zakharyash; Vladimir V. Vasiliev; Victor N. Ovsyuk; Galina V. Chekanova; Mikhail S. Nikitin; Ivan Yu. Lartsev; Alexander L. Aseev

doi:10.1117/12.624912

15 October 2005 MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures

Sergey A. Dvoretsky, Vasiliy S. Varavin, Nikolay N. Mikhailov, Yuri G. Sidorov, Tamara I. Zakharyash, Vladimir V. Vasiliev, Victor N. Ovsyuk, Galina V. Chekanova, Mikhail S. Nikitin, Ivan Yu. Lartsev, Alexander L. Aseev

Author Affiliations +

Proceedings Volume 5964, Detectors and Associated Signal Processing II; 59640A (2005) https://doi.org/10.1117/12.624912
Event: Optical Systems Design 2005, 2005, Jena, Germany

Abstract

Ultimate performance small-pitched infrared focal plane arrays (FPA) are of the great interest for development and production of state-of-the-art special and common use thermal imagers. Novel MBE-grown Hg_1-xCd_xTe/CdZnTe/GaAs heterostructures (MCT/CZT on GaAs HS) are considered perspective for implementation of sophisticated FPA concepts including multi-color and HOT (high operating temperature). Performance of MWIR and LWIR photoconductive (PC) and photovoltaic (PV) infrared detectors fabricated on the base of a. m. heterostructures are presented. The main feature of developed technology is formation of multi-layer device structure in single MBE growth run with precise control of thickness and alloy composition "x" across individual layers and hence throughout heterostructure. Flexible HS design results in half-finished products of PC and PV detectors with optimized parameters of absorber and perfect interfaces between absorber and blocking layers providing effective suppression of surface recombination and surface leakage currents. Giant peak responsivity R_V (λ_co=10.5 μm, 500 K, 1200 Hz) over 6,0×10⁵ V/W was reached on LWIR PC. Average values D* = 1.8×10¹¹ cmHz^1/2W^-1 and NEDT = 9 mκ were measured on 4×288 PV FPA with λ_co = 11.2 μm at T=78 K just as 23 mK and 19 mκ on 320×256(240) PV FPA with λ_co = 5.5 and λ_co = 10.2 μm at T=78 K.

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Sergey A. Dvoretsky, Vasiliy S. Varavin, Nikolay N. Mikhailov, Yuri G. Sidorov, Tamara I. Zakharyash, Vladimir V. Vasiliev, Victor N. Ovsyuk, Galina V. Chekanova, Mikhail S. Nikitin, Ivan Yu. Lartsev, and Alexander L. Aseev "MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures", Proc. SPIE 5964, Detectors and Associated Signal Processing II, 59640A (15 October 2005); https://doi.org/10.1117/12.624912

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