Effects of annealing on surface passivation of P-Type Hg1-xCdxTe grown by LPE

Yan-Li Shi; Ying Yao; Yu-hui Su; Li Lv; Ying Tian; Jian-Cai Chen; Xiang-Hua Ma

doi:10.1117/12.625008

14 October 2005 Effects of annealing on surface passivation of P-Type Hg_1-xCd_xTe grown by LPE

Yan-Li Shi, Ying Yao, Yu-hui Su, Li Lv, Ying Tian, Jian-Cai Chen, Xiang-Hua Ma

Proceedings Volume 5964, Detectors and Associated Signal Processing II; 59640Y (2005) https://doi.org/10.1117/12.625008
Event: Optical Systems Design 2005, 2005, Jena, Germany

Abstract

Experiments were designed for analyzing effects of annealing on surface properties of P-type Hg_1-xCd_xTe Liquid Phase Epitaxy (LPE) films. Owing to special surface characteristics of P-type Hg_1-xCd_xTe material, it is necessary and vital to obtain good passivation layer for both high performance photoconductive type and photovoltaic type Hg_1-xCd_xTe detectors. Variable magnetic-field Hall measurement was used to investigate surface properties in temperature range from 1.5 to 200 K for the annealed and unannealed samples. Different temperature behavior of Hall coefficient (R_H) was observed for the two kinds of samples. Surface electrons were observed existing for unannealed samples judging by the low temperature characteristic of R_H (below 10k). In addition to this, C-V measurement of MIS devices made of same annealed and unannealed sample was also used to analyze the effects of annealing. In the C-V measurement applied bias to which annealed samples could bear was larger than that to unannealed one. Meanwhile, fixed charge density in passivation layer of the annealed samples was smaller than that of the unannealed samples. The above results implied surface charge density on the surface of p-Hg_1-xCd_xTe material was reduced by annealing treatment comparing with that without annealing. On conclusion, annealing improved surface status of P-type Hg_1-xCd_xTe material.

Citation Download Citation

Yan-Li Shi, Ying Yao, Yu-hui Su, Li Lv, Ying Tian, Jian-Cai Chen, and Xiang-Hua Ma "Effects of annealing on surface passivation of P-Type Hg_1-xCd_xTe grown by LPE", Proc. SPIE 5964, Detectors and Associated Signal Processing II, 59640Y (14 October 2005); https://doi.org/10.1117/12.625008

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KEYWORDS

Annealing

Magnetism

Temperature metrology

Mercury cadmium telluride

Cadmium

Tellurium

Mercury

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