Detectors of UV and x-ray irradiation on the base of metal-zinc selenide contact

Victor P. Makhniy; Volodymyr V. Mel'nyk; Peter N. Gorley; Paul P. Horley; Mykhailo M. Sletov; Zhuang Zhuo

doi:10.1117/12.666966

9 December 2005 Detectors of UV and x-ray irradiation on the base of metal-zinc selenide contact

Victor P. Makhniy, Volodymyr V. Mel'nyk, Peter N. Gorley, Paul P. Horley, Mykhailo M. Sletov, Zhuang Zhuo

Proceedings Volume 6024, ICO20: Optical Devices and Instruments; 60242J (2005) https://doi.org/10.1117/12.666966
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

The paper presents results of experimental investigations of electric and photoelectric properties of the diodes, obtained by thermal sputtering of semitransparent Ni layers over monocrystalline wafers of zinc selenide. It was found that parameters of diode structures studied are very similar to those of "ideal" metal-semiconductor contact. Influence of temperature, UV- and x-ray radiation on diode parameters is discussed.

Citation Download Citation

Victor P. Makhniy, Volodymyr V. Mel'nyk, Peter N. Gorley, Paul P. Horley, Mykhailo M. Sletov, and Zhuang Zhuo "Detectors of UV and x-ray irradiation on the base of metal-zinc selenide contact", Proc. SPIE 6024, ICO20: Optical Devices and Instruments, 60242J (9 December 2005); https://doi.org/10.1117/12.666966

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