A novel structure for high peak power semiconductor lasers

Baoxue Bo; Xin Gao; Yi Qu; Xiuhua Fu; Jing Zhang; Hui Li; Peng Lu

doi:10.1117/12.667155

23 December 2005 A novel structure for high peak power semiconductor lasers

Baoxue Bo, Xin Gao, Yi Qu, Xiuhua Fu, Jing Zhang, Hui Li, Peng Lu

Author Affiliations +

Proceedings Volume 6028, ICO20: Lasers and Laser Technologies; 60280U (2005) https://doi.org/10.1117/12.667155
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

A novel structure for high peak power output of semiconductor lasers has been designed with a weak optical absorption region near cavity facet and a low optical energy density distribution on both front and back cavity facets has been realized simultaneously. The device has been fabricated with a standard MBE grown AlGaAs/GaAs material wafer, and a stack assembly of five laser chips has been finally obtained. The measured stack has a maximum peak power output of 300W with a whole emitting aperture of 2×0.5mm² and a satisfactory farfield (θ⊥) output property is also achieved with θ⊥ of 31^o.

Citation Download Citation

Baoxue Bo, Xin Gao, Yi Qu, Xiuhua Fu, Jing Zhang, Hui Li, and Peng Lu "A novel structure for high peak power semiconductor lasers", Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60280U (23 December 2005); https://doi.org/10.1117/12.667155

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