Ion beam synthesis of WC-SiC nanocomposite thin layers and their electron field emission properties

W. M. Tsang; S. P. Wong; J. K. N. Lindner

doi:10.1117/12.638686

21 December 2005 Ion beam synthesis of WC-SiC nanocomposite thin layers and their electron field emission properties

W. M. Tsang, S. P. Wong, J. K. N. Lindner

Author Affiliations +

Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 603702 (2005) https://doi.org/10.1117/12.638686
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia

Abstract

A WC-SiC nanocomposite thin layer structure consisting of nano-grains of WC embedded in SiC has been fabricated on an n-type Si substrate by ion beam synthesis (IBS) using a metal vapor vacuum arc ion source. A SiC layer was first formed by high dose carbon implantation into the silicon substrate. Subsequent W implantation was preformed to form the WC-SiC nanocomposite structure that can be achieved under appropriate implantation and annealing conditions. Characterization of the implanted samples was performed using atomic force microscopy (AFM), conducting AFM, x-ray photoelectron spectroscopy, and transmission electron microscopy. Excellent field emission properties with an ultra-low turn-on field of 0.35 V/μm from such a nanocomposites structure have been achieved. While it has been demonstrated that the surface morphology effect and the local electrical inhomogeneity are two field enhancement mechanisms for IBS SiC/Si structures, they are not sufficient to account for the excellent emission properties of these WC-SiC nanocomposite layers. To explain the excellent field emission properties from these structures, a proximity field enhancement effect between closely spaced conducting grains in a dielectric medium and an internal quantum tunneling mechanism are proposed.

Citation Download Citation

W. M. Tsang, S. P. Wong, and J. K. N. Lindner "Ion beam synthesis of WC-SiC nanocomposite thin layers and their electron field emission properties", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 603702 (21 December 2005); https://doi.org/10.1117/12.638686

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE