A new empirical model for heterojunction phototransistors

Hongwei Liu; Pingjuan Niu; Weilian Guo

doi:10.1117/12.638694

30 December 2005 A new empirical model for heterojunction phototransistors

Hongwei Liu, Pingjuan Niu, Weilian Guo

Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 603711 (2005) https://doi.org/10.1117/12.638694
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia

Abstract

A new simplified heterojunction phototransistor (HPT) circuit model is given in this paper. Most of papers use Ebers-Moll model to describe the optical-electrical relations of HPT. Which is a physical based model and must be changed with different device structure. In this paper, an empirical model is employed. This model mainly formed by three parts: the photo current (I_ph), base current (I_b) and collector current(I_c). A dependent current source is used to model the photo current between the collector and base. The photo current can be different from different optical power. Ib are depend on base-emitter voltage while Ic is a function of collector-emitter voltage, I_b and I_ph. Contrast with the Ebers-moll model, the empirical model greatly reduced the complexity of the circuit. The model parameters are extracted on measured Ic-Vce and gummel plots. Then, dates in some documents were used to test the empirical model. There is a good agreement with the measured results.

Citation Download Citation

Hongwei Liu, Pingjuan Niu, and Weilian Guo "A new empirical model for heterojunction phototransistors", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 603711 (30 December 2005); https://doi.org/10.1117/12.638694

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