Analysis of localized recombination in quantum dots

Huw D. Summers; Helen Pask; Peter Blood

doi:10.1117/12.661399

28 February 2006 Analysis of localized recombination in quantum dots

Huw D. Summers, Helen Pask, Peter Blood

Proceedings Volume 6115, Physics and Simulation of Optoelectronic Devices XIV; 61151F (2006) https://doi.org/10.1117/12.661399
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We have calculated the recombination rates of electrons and holes in a quantum dot ensemble. The calculation treats the various recombination mechanisms as localized events at the dot site and uses global population statistics, re-interpreted to provide integer occupancies of the ground and excited states of the dots. The results show that the localization means that unambiguous functional forms describing the recombination in terms of charge carrier density can no longer be determined. The evolution of the recombination rates with increasing injection is complex and the different radiative and non-radiative routes have a similar dependence. Experimentally this means that studies of the light output versus current can no longer be used to assess the dominant recombination process.

Citation Download Citation

Huw D. Summers, Helen Pask, and Peter Blood "Analysis of localized recombination in quantum dots", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151F (28 February 2006); https://doi.org/10.1117/12.661399

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