Paper
24 February 2006 InP-based 1.55 μm waveguide-integrated photodetectors for high-speed applications
A. Beling
Author Affiliations +
Abstract
The paper reviews key characteristics of ultra fast evanescently coupled waveguide-integrated p-i-n photodetectors for 1.55μm wavelength. In detail, a highly efficient 100 GHz photodetector module and a low-capacitance miniaturized photodiode with 120 GHz bandwidth employing an optical matching layer for enhanced responsivity are reported. Furthermore, recent results on monolithically integrated traveling wave photodetectors based on discrete miniaturized photodiodes with parallel optical feed are presented.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Beling "InP-based 1.55 μm waveguide-integrated photodetectors for high-speed applications", Proc. SPIE 6123, Integrated Optics: Devices, Materials, and Technologies X, 61230K (24 February 2006); https://doi.org/10.1117/12.644606
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Waveguides

Photodetectors

Photodiodes

Semiconducting wafers

Brain-machine interfaces

Resistors

Eye

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