Paper
19 May 2006 Coma aberration measurement by lateral image displacements at different defocus positions
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Abstract
As critical dimension shrinks, the effect of coma aberration on the performance of modern lithographic tools has become increasingly obvious. So, research on high-accuracy in-situ measurement of coma aberration is necessary. In this paper, a new method to measure coma aberration in projection system is proposed. The principle of the method is described in detail. The coma-induced image displacements are simulated at different defocus positions by simulation program PROLITH. The sensitivity coefficients of coma aberration are calculated. The advantage of the method is that the measurement accuracy of coma aberration can increase approximately by 25% compared with commonly used TAMIS method.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mingying Ma, Xiangzhao Wang, Fan Wang, Weijie Shi, and Dongqing Zhang "Coma aberration measurement by lateral image displacements at different defocus positions", Proc. SPIE 6150, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 615003 (19 May 2006); https://doi.org/10.1117/12.676894
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Cited by 2 scholarly publications.
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KEYWORDS
Monochromatic aberrations

Projection systems

Lithography

Coherence (optics)

Optical lithography

Semiconducting wafers

Fluctuations and noise

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