Paper
23 February 2006 IR transmission and reflection spectra of C60-doped GaAs
Bo Chen, Huahan Zhan, Qihui Wu, Fuchun Xu, Junyong Kang
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Abstract
Three kinds of samples, C60 uniformly-doped, δ-doped and C60-Si co-doped GaAs on GaAs(001) substrates are prepared by molecular beam epitaxy. Infrared ray (IR) transmission and reflection measurements(400-4000 cm-1) have been carried out. The results show similar IR spectra between C60 uniformly-doped and δ-doped GaAs, while C60-Si co-doped GaAs display different optical properties. These phenomena are propably related to the character of C60 adsorption changing from physisorption to chemisorption via variations in surface reconstruction. C60-GaAs and C60-Si bondings may be formed in our samples. In the spectra, it is very difficult to observe direct evidence associated with C60. The C60 in GaAs may have partially decomposed.
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Bo Chen, Huahan Zhan, Qihui Wu, Fuchun Xu, and Junyong Kang "IR transmission and reflection spectra of C60-doped GaAs", Proc. SPIE 6150, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 61504C (23 February 2006); https://doi.org/10.1117/12.676651
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KEYWORDS
Gallium arsenide

Reflection

Silicon

Carbon

FT-IR spectroscopy

Phonons

Infrared radiation

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