Analysis of the emission spectrum of Xe and Sn

A. Sasaki; K. Nishihara; A. Sunahara; T. Nishikawa; F. Koike; K. Kagawa; H. Tanuma

doi:10.1117/12.655938

24 March 2006 Analysis of the emission spectrum of Xe and Sn

A. Sasaki, K. Nishihara, A. Sunahara, T. Nishikawa, F. Koike, K. Kagawa, H. Tanuma

Proceedings Volume 6151, Emerging Lithographic Technologies X; 61513W (2006) https://doi.org/10.1117/12.655938
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

The atomic processes in the Xe and Sn plasmas are investigated. The wavelength of atomic transitions is shown to have a critical effect in reproducing experiments. The wavelengths of resonance lines in our model are improved through detailed comparison with charge specific spectroscopic measurement. Distribution of satellite lines in the presence of the effect of the configuration interaction (CI) is investigated. The spectral profile of Xe and Sn emission, which determines fraction of usable EUV power, is discussed with respect to its dependence on the plasma temperature, density as well as the optical depth.

Citation Download Citation

A. Sasaki, K. Nishihara, A. Sunahara, T. Nishikawa, F. Koike, K. Kagawa, and H. Tanuma "Analysis of the emission spectrum of Xe and Sn", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61513W (24 March 2006); https://doi.org/10.1117/12.655938

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