Epitaxial Overgrowth Of Si On SiO2 Surface

A. S. Yue; S. W. Oh; S. S. Rhee

doi:10.1117/12.961211

26 June 1986 Epitaxial Overgrowth Of Si On SiO₂ Surface

A. S. Yue, S. W. Oh, S. S. Rhee

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961211
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

The novel approach to increase the performance of semiconductor devices is proposed. This approach is based on the concept of three-dimensional device fabrication where a single-crystalline Si layer is electrically isolated from a similar Si layer by a Si0₂ film. The growth of this single-crystalline Si layer is accomplished by an epitaxial growth of Si on slots of the seed region of a Si substrate bordered with a Si0₂ film and the overgrowth of Si on top of the Si0₂ surface by the CVD technique. The single-crystallinity of the epilayer has been revealed by the presence of Kikuchi lines on its surface.

Citation Download Citation

A. S. Yue, S. W. Oh, and S. S. Rhee "Epitaxial Overgrowth Of Si On SiO₂ Surface", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961211

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available