Spin relaxation of holes in Ge quantum dots

A. F. Zinovieva; A. V. Nenashev; A. V. Dvurechenskii

doi:10.1117/12.677158

10 June 2006 Spin relaxation of holes in Ge quantum dots

A. F. Zinovieva, A. V. Nenashev, A. V. Dvurechenskii

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600K (2006) https://doi.org/10.1117/12.677158
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

Here we investigate theoretically the phonon-assisted spin relaxation of holes in Ge/Si quantum dots (QD). This mechanism is dominant for an isolated QD in external magnetic field H≥O.1 T. In the temperature range T<60 K there are two competitive phonon-assisted spin flip processes: direct one-phonon process (first-order to perturbative strain field) and Raman-type process (second-order). In the framework of tight-binding approximation, relaxation times τ⁽¹⁾ and τ⁽²⁾, corresponding to these processes, were obtained. The relaxation time τ⁽¹⁾ weakly depends on temperature: τ⁽¹⁾→const for T→0 (spontaneous transitions) and τ⁽¹⁾~T^-1 for higher T (when induced transitions are dominant). Magnetic field dependence of τ⁽¹⁾ is rather strong: τ⁽¹⁾~H^-5, while the rate of Raman-type processes is almost field-independent when T>gβH/k and strongly depends on the temperature: τ⁽²⁾~T^-7.

Citation Download Citation

A. F. Zinovieva, A. V. Nenashev, and A. V. Dvurechenskii "Spin relaxation of holes in Ge quantum dots", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600K (10 June 2006); https://doi.org/10.1117/12.677158

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