Calculation of secondary charge carrier current in submicron channel MOSFETs at stress regimes of operation

Vladimir Borzdov; Fadei Komarov; Oleg Zhevnyak; Vadim Galenchik; Dmitry Pozdnyakov; Andrei Borzdov

doi:10.1117/12.683488

10 June 2006 Calculation of secondary charge carrier current in submicron channel MOSFETs at stress regimes of operation

Vladimir Borzdov, Fadei Komarov, Oleg Zhevnyak, Vadim Galenchik, Dmitry Pozdnyakov, Andrei Borzdov

Author Affiliations +

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601E (2006) https://doi.org/10.1117/12.683488
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

The Monte Carlo model of the impact ionization in deep submicron MOSFETs is worked out. This model allows the influence of the secondary charge carrier current on the drain current to be evaluated. The developed model is built on the basis of the reduction scheme. Moreover, the model takes into account all the major features of electron transport in deep submicron MOSFETs, the dominant scattering mechanisms, the quantization of electron spectrum as well as the modeling of constructive parameters and basic drain breakdown mechanisms.

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Vladimir Borzdov, Fadei Komarov, Oleg Zhevnyak, Vadim Galenchik, Dmitry Pozdnyakov, and Andrei Borzdov "Calculation of secondary charge carrier current in submicron channel MOSFETs at stress regimes of operation", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601E (10 June 2006); https://doi.org/10.1117/12.683488

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