Surface Emitting Sources For Optical Waveguides

Eugene G. Dierschke

doi:10.1117/12.954476

6 November 1975 Surface Emitting Sources For Optical Waveguides

Eugene G. Dierschke

Proceedings Volume 0063, Guided Optical Communications; (1975) https://doi.org/10.1117/12.954476
Event: 19th Annual Technical Symposium, 1975, San Diego, United States

Abstract

The basic design principles of radiation emitting diodes are discussed. Theoretical and experimental values of radiant power, radiant intensity, and radiance of GaAs and GaAlAs infrared surface emitting sources are reviewed. A comparison of various device geometries shows that small-area, high-radiance, etched-well emitters are the optimum design for coupling to individual optical fibers but that high-radiant-intensity shaped emitters are the optimum design for coupling to larger diameter fiber bundles. Improved linearity can be achieved with GaAlAs planar emitters incorporating a buried-junction structure to minimize non-radiative surface recombination.

Citation Download Citation

Eugene G. Dierschke "Surface Emitting Sources For Optical Waveguides", Proc. SPIE 0063, Guided Optical Communications, (6 November 1975); https://doi.org/10.1117/12.954476

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available