Model-based lithography verification using the new manufacturing sensitivity model

Daniel Zhang; Lawrence Melvin

doi:10.1117/12.686711

20 October 2006 Model-based lithography verification using the new manufacturing sensitivity model

Daniel Zhang, Lawrence Melvin

Proceedings Volume 6349, Photomask Technology 2006; 63494Q (2006) https://doi.org/10.1117/12.686711
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

Process depth of focus analysis has always been an important method for determining semiconductor integrated circuit manufacturability. This is becoming even more apparent as process nodes continue to shrink and more aggressive Resolution Enhancement Technology (RET) techniques are adopted to help retain process latitude. Process window is one of the most important factors in improving yield and reducing production cost. Therefore, pattern verification prior to mask tape-out is essential to save development time, and cost is extremely important. The concept of focus-sensitive hotspot detection has been recently introduced using a Manufacturing Sensitivity Model (MSM). As the MSM interacts with the pattern, the model produces output that judges the quality of the through-process correction in a single piece of interpreted data. The MSM output can then be readily analyzed to find process sensitive patterns. In this study, we will apply a process focus sensitivity detection algorithm to various designs using Focus Sensitive Model (FSM). The results will be compared to conventional depth of focus analysis techniques. The goal is to understand the relationship between the focus sensitivity and the CD error variations. This will be used to understand if focus-sensitive hotspot detection using FSM can be applied for verifying RET process qualities.

Citation Download Citation

Daniel Zhang and Lawrence Melvin "Model-based lithography verification using the new manufacturing sensitivity model", Proc. SPIE 6349, Photomask Technology 2006, 63494Q (20 October 2006); https://doi.org/10.1117/12.686711

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