Vertical-illumination InGaAs/InP quasi-unipolar photodetector with high-bandwidth, quantum efficiency, and resistance to bandwidth collapse

P. D. Yoder; E. J. Flynn; S. Sridharan

doi:10.1117/12.699707

7 February 2007 Vertical-illumination InGaAs/InP quasi-unipolar photodetector with high bandwidth, quantum efficiency, and resistance to bandwidth collapse

P. D. Yoder, E. J. Flynn, S. Sridharan

Author Affiliations +

Proceedings Volume 6468, Physics and Simulation of Optoelectronic Devices XV; 64680X (2007) https://doi.org/10.1117/12.699707
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We report new experimental and theoretical findings relating the design of dopant profile to the bandwidth and optical saturation power of high speed InGaAs/InP unity gain photodetectors. We demonstrate significant improvements in each of these performance metrics by means of quasi-unipolar operation, and interpret results on the basis of full band ensemble Monte Carlo simulation.

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P. D. Yoder, E. J. Flynn, and S. Sridharan "Vertical-illumination InGaAs/InP quasi-unipolar photodetector with high bandwidth, quantum efficiency, and resistance to bandwidth collapse", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680X (7 February 2007); https://doi.org/10.1117/12.699707

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