Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy

V. M. Smirnov; P. J. Batty; A. Krier; R. Jones; V. I. Vasil'ev; G. S. Gagis; V. I. Kuchinskii

doi:10.1117/12.721327

3 February 2007 Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy

V. M. Smirnov, P. J. Batty, A. Krier, R. Jones, V. I. Vasil'ev, G. S. Gagis, V. I. Kuchinskii

Proceedings Volume 6479, Quantum Sensing and Nanophotonic Devices IV; 647918 (2007) https://doi.org/10.1117/12.721327
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

GaInAsPSb is a new narrow gap semiconductor material, which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Unique physical properties of the alloy are discussed and its advantages for mid-infrared optoelectronic devices are considered. Liquid phase epitaxy (LPE) growth conditions for GaInAsPSb homogeneous high crystal quality layers lattice-matched onto GaSb substrates were determined. Spectra of photoluminescence (PL) emission were investigated. Homojunction p-i-n light-emitting diodes (LEDs) based on this pentenary alloy were fabricated and electroluminescence (EL) peaking near 4.0 μm at room temperature was observed.

Citation Download Citation

V. M. Smirnov, P. J. Batty, A. Krier, R. Jones, V. I. Vasil'ev, G. S. Gagis, and V. I. Kuchinskii "Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy", Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 647918 (3 February 2007); https://doi.org/10.1117/12.721327

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