Growth of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te from Te Solvent By The Travelling Heater Methode

J Schmitz; H Walcher; J Baars

doi:10.1117/12.938550

22 November 1986 Growth of Hg_1-xCd_xTe from Te Solvent By The Travelling Heater Methode

J Schmitz, H Walcher, J Baars

Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938550
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

Crystals of Hgl-xCdTe were grown by the Travelling Heater Method (THM) with Te as a solvent zone and aiameers up to 15 mm. Microprobe measurements show that the new developed furnace is suitable for the growth of HgCdTe-crystals. A new method to produce feed material with larger diameters than 10 mm is presented.

Citation Download Citation

J Schmitz, H Walcher, and J Baars "Growth of Hg_1-xCd_xTe from Te Solvent By The Travelling Heater Methode", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938550

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