Paper
28 June 2007 Simulation of the dynamics of phase transitions in CdSe induced by irradiation with nanosecond pulses of an excimer laser
S. P. Zhvavyi, G. L. Zykov
Author Affiliations +
Proceedings Volume 6732, International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies; 67321I (2007) https://doi.org/10.1117/12.752195
Event: International Conference on Lasers, Applications, and Technologies '07, 2007, Minsk, Belarus
Abstract
A numerical simulation of the dynamics of melting and crystallization processes induced in cadmium selenide by radiation of the KrF excimer laser (&lgr; = 248 nm, &tgr; = 20 ns) was carried out taking into account the components evaporation from the surface and their diffusion in the melt. It is shown that intensive components evaporation from the surface results in the formation of nonmonotone temperature profile with maximum temperature at a depth of about 5 - 15 nm. As a result, melt formed in the semiconductor volume extends both to the surface and to the depth of sample. After termination of the laser radiation enrichment of the surficial region by selenium is equals ~ 0.51.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. P. Zhvavyi and G. L. Zykov "Simulation of the dynamics of phase transitions in CdSe induced by irradiation with nanosecond pulses of an excimer laser", Proc. SPIE 6732, International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies, 67321I (28 June 2007); https://doi.org/10.1117/12.752195
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KEYWORDS
Cadmium

Selenium

Excimer lasers

Diffusion

Crystals

Chemical species

Laser crystals

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