Simulation of thermal stress in n-type diamond thin films prepared by CVD

Yongjie Wang; Qingxun Zhao; Zhanlong Zhao

doi:10.1117/12.757610

4 January 2008 Simulation of thermal stress in n-type diamond thin films prepared by CVD

Yongjie Wang, Qingxun Zhao, Zhanlong Zhao

Proceedings Volume 6825, Lasers in Material Processing and Manufacturing III; 68251A (2008) https://doi.org/10.1117/12.757610
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Due to thermal mismatch, stresses develop in n-type diamond thin films when cooled down to room temperature from deposition temperature. In this investigation, thermal stresses in diamond films deposited on silicon substrate are calculated, the influence of temperature and film thickness on thermal stresses are also discussed. The results show that thermal stresses are sensitive to deposition parameters, the thermal stresses increase with the increase of deposition temperature, reach the maximum value of 0.724GPa at 1000k, and then begin to decrease. With the increase of diamond thickness and substrate thickness, the thermal stresses decrease and increase respectively.

Citation Download Citation

Yongjie Wang, Qingxun Zhao, and Zhanlong Zhao "Simulation of thermal stress in n-type diamond thin films prepared by CVD", Proc. SPIE 6825, Lasers in Material Processing and Manufacturing III, 68251A (4 January 2008); https://doi.org/10.1117/12.757610

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