Paper
15 January 2008 Current spreading analysis in vertical electrode GaN-based blue LEDs
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Abstract
In this study, effects of n-electrode patterns to the current spreading in the active region were analyzed on the blue vertical light emitting diode (VLED) with GaN/InGaN multi quantum well (MQW). Several n-electrode patterns of the VLED are designed, analyzed qualitatively, and investigated its effect to current spreading in the active region. A 3-dimensinal circuit model whose parameters are experimentally extracted from an actual VLED chip is adopted for the quantitative analysis of current spreading. The n-electrode patterns are modeled and simulated by simple electrical circuits in order to find the current distribution and current-voltage characteristics of devices. Based on theoretical analysis results, blue VLEDs with different n-electrode patterns were fabricated and a series of measurements were carried out. Analytic and experimental results for different n-electrode pattern showed quite similar tendencies. Finally, we proposed some design methodologies for improved current spreading.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joo Sun Yun, Sung Min Hwang, and Jong In Shim "Current spreading analysis in vertical electrode GaN-based blue LEDs", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410L (15 January 2008); https://doi.org/10.1117/12.756517
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Cited by 5 scholarly publications.
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KEYWORDS
Light emitting diodes

Circuit switching

Resistance

Blue light emitting diodes

Diodes

Electrodes

Resistors

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