Paper
5 March 2008 Single-frequency tunable VECSEL around the cesium D2 line
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Abstract
This work reports on an optically-pumped vertical external-cavity surface-emitting laser (VECSEL) emitting around 852 nm for Cesium atomic clocks experiments. We describe the design and the characterization of a VECSEL semiconductor structure suitable for these applications. The parameters of the structure have been optimized in order to have a low threshold and a high gain structure emitting around 852 nm. We achieved an output power of 330 mW for 1.1 W of incident pump power. We are able to simulate the laser emission variations with the temperature of the substrate, the pump radius on the semiconductor structure and the losses inside cavity. A compact and robust setup was built to obtain a stable single-frequency emission. We obtained a 17-mW single frequency emission exhibiting broad and fine tunability around the Cesium D2 line.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Cocquelin, G. Lucas-Leclin, P. Georges, I. Sagnes, and A. Garnache "Single-frequency tunable VECSEL around the cesium D2 line", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 687112 (5 March 2008); https://doi.org/10.1117/12.763119
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Cited by 5 scholarly publications.
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KEYWORDS
Quantum wells

Semiconductors

Cesium

Semiconductor lasers

Laser damage threshold

Output couplers

Absorption

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