Paper
14 February 2008 AlGaInAs quantum-well 1.3-μm laser by a diode-pumped actively Q-switched Nd:GdVO4 laser
S. C. Huang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, K. F. Huang
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Abstract
We report a high-peak-power AlGaInAs 1.36-μm vertical-external-cavity surface-emitting laser (VECSEL) optically pumped by a diode-pumped actively Q-switched Nd:GdVO4 1.06-µm laser under room-temperature operation. The gain medium is an AlGaInAs quantum wells (QWs)/barrier structure grown on a Fe-doped InP substrate by metalorganic chemical-vapor deposition. With an average pump power of 1.9 W, an average output power of 340 mW was obtained at a pulse repetition rate of 40 kHz, corresponding to an optical-to-optical conversion efficiency of 18.76%. With a peak pump power of 7.9 kW, the highest peak output power was 1.3 kW at a pulse repetition rate of 10 kHz.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. C. Huang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang "AlGaInAs quantum-well 1.3-μm laser by a diode-pumped actively Q-switched Nd:GdVO4 laser", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68712K (14 February 2008); https://doi.org/10.1117/12.762962
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KEYWORDS
Semiconductor lasers

Quantum wells

Q switched lasers

Optical pumping

Absorption

Laser optics

Solid state lasers

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