Room-temperature mid-infrared Cr2+:ZnSe and Cr2+:ZnS random powder lasers

C. Kim; D. V. Martyshkin; V. V. Fedorov; S. B. Mirov

doi:10.1117/12.764176

13 March 2008 Room-temperature mid-infrared Cr²⁺:ZnSe and Cr²⁺:ZnS random powder lasers

C. Kim, D. V. Martyshkin, V. V. Fedorov, S. B. Mirov

Proceedings Volume 6871, Solid State Lasers XVII: Technology and Devices; 68712R (2008) https://doi.org/10.1117/12.764176
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States

Abstract

We report a simple method for fabricating transition metal (TM) doped II-VI powders with average size of about 10- 20μm as well as room temperature mid-infrared (2-3 μm) random lasing based on Cr²⁺-doped ZnSe and ZnS powders prepared without crystal growth stage under optical intra-shell excitation of chromium. Fabrication of Cr²⁺-doped ZnSe and ZnS powders involved two simple stages. At the first stage, pure ZnSe, (ZnS) and CrSe, (CrS) (with a concentration of Cr²⁺ ion 2×10^-19 cm^-3 and 5 × 10^-19 cm^-3 for ZnSe and ZnS respectively) chemicals with an average grain size of 10μm were uniformly mixed by means of a mechanical shaker. At the second stage the obtained ZnSe/CrSe mixture was sealed into evacuated (~10-4 Torr) quartz ampoule and annealed either at 1200°C for 15 minute, or 1000°C for 3 days. In the case of ZnS/CrS mixtures the annealing was performed in evacuated quartz ampoule at 1000 °C for 14 days. After annealing, under 1560 nm excitation, the powders demonstrated room temperature middle-infrared luminescence of Cr²⁺ similar to Cr²⁺ emission in bulk ZnSe and ZnS. Moreover, the output-input characteristic clearly demonstrated the threshold-like behavior of the output signal with the threshold pump energy density of ~44.5 mJ/cm² ~7.46 mJ/cm², and 63.6 mJ/cm² for Cr:ZnSe annealed for 15 min, 3 days, and Cr:ZnS respectively.

Citation Download Citation

C. Kim, D. V. Martyshkin, V. V. Fedorov, and S. B. Mirov "Room-temperature mid-infrared Cr²⁺:ZnSe and Cr²⁺:ZnS random powder lasers", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68712R (13 March 2008); https://doi.org/10.1117/12.764176

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