Paper
26 February 2008 Line length scalable high power diode laser with power densities > 100kw/cm2 for industrial Si-annealing applications
Author Affiliations +
Abstract
We present newly developed high power diode laser modules which are performing at outstanding power densities and line uniformity. The combination of recently designed laser diode bars on passive heat sinks and optimized micro-optics results to laser modules with power densities > 100kW/cm2 in a line length of 12mm x 0.1mm. The usage of non periodic structured homogenizers leads to a homogeneity of less than 3% p/v which allows precise heating and annealing applications. The application for such laser lines are hardening, metallization and annealing of different materials. In the presentation we will show results of thin film Si-a annealing process with direct diode laser annealing.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Markus Revermann, Andreas Bayer, and Jens Meinschien "Line length scalable high power diode laser with power densities > 100kw/cm2 for industrial Si-annealing applications", Proc. SPIE 6879, Photon Processing in Microelectronics and Photonics VII, 68790R (26 February 2008); https://doi.org/10.1117/12.762956
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

Annealing

Crystals

Laser development

Collimation

High power diode lasers

Laser crystals

Back to Top