Paper
22 February 2008 Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy
Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
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Abstract
InGaN epitaxial film growth has been performed on (0001) c-, (1120) a- and (1100) (see manuscript for full text) m-plane ZnO substrates by metalorganic vapor phase epitaxy in the temperature range of 550°C - 680°C. The grown layers were confirmed to be single crystalline by X-ray diffraction.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki "Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688904 (22 February 2008); https://doi.org/10.1117/12.784113
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Cited by 4 scholarly publications.
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KEYWORDS
Zinc oxide

Indium gallium nitride

Atomic force microscopy

Crystals

Temperature metrology

Vapor phase epitaxy

Annealing

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