Progress in developing nanophotonic integrated circuits

Takashi Yatsui; Gyu-Chul Yi; Motoichi Ohtsu

doi:10.1117/12.801925

29 April 2008 Progress in developing nanophotonic integrated circuits

Takashi Yatsui, Gyu-Chul Yi, Motoichi Ohtsu

Proceedings Volume 7007, INDLAS 2007: Industrial Laser Applications; 700703 (2008) https://doi.org/10.1117/12.801925
Event: INDLAS 2007: Industrial Laser Applications, 2007, Bran, Romania

Abstract

We review recent progress in the development of nanophotonic devices using the optical near-field interaction. ZnO nanocrystallites are potentially ideal components for realizing room-temperature operation of such devices due to their high exciton-binding energy and great oscillator strength. To confirm this promising optical property of ZnO, we examined the near-field time-resolved spectroscopy of ZnO nanorod double-quantum-well structures (DQWs). First, we observed the nutation of the population between the resonantly coupled exciton states of DQWs, in which the coupling strength of the near-field interaction was found to decrease exponentially as the separation increased. Furthermore, we successfully demonstrated the AND-gate operation by controlling a dipole-forbidden optical energy transfer among resonant exciton states. Our results provide criteria for designing nanophotonic devices. The success of time-resolved near-field spectroscopy of isolated DQWs described here is a promising step toward realizing a practical nanometerscale photonic switch and related devices.

Citation Download Citation

Takashi Yatsui, Gyu-Chul Yi, and Motoichi Ohtsu "Progress in developing nanophotonic integrated circuits", Proc. SPIE 7007, INDLAS 2007: Industrial Laser Applications, 700703 (29 April 2008); https://doi.org/10.1117/12.801925

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