Paper
17 April 2008 Reflective interferometer for investigation of amplitude-phase characteristics of semiconductor nanostructures
A. A. Kovalyov, M. A. Putyato, V. V. Preobrazhenskii, O. P. Pchelyakov, N. N. Rubtsova
Author Affiliations +
Proceedings Volume 7024, International Workshop on Quantum Optics 2007; 70240N (2008) https://doi.org/10.1117/12.801691
Event: International Workshop on Quantum Optics 2003, 2003, St. Petersburg, Russian Federation
Abstract
The reflective interferometer is suggested to use in measurements of spectral dependence of the phase of the reflectivity of mirrors, manufactured on a base of multi-layer semiconductor nanostructures. Interferometer is tested on the semiconductor mirror used to start the mode self-synchronization regime of the laser Nd3+:KGd(WO4)2. The technique can be applied to a wide variety of radiation wavelength, and it shows higher sensitivity of the phase characteristics measurement as compared to traditional two-beam interferometers.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. A. Kovalyov, M. A. Putyato, V. V. Preobrazhenskii, O. P. Pchelyakov, and N. N. Rubtsova "Reflective interferometer for investigation of amplitude-phase characteristics of semiconductor nanostructures", Proc. SPIE 7024, International Workshop on Quantum Optics 2007, 70240N (17 April 2008); https://doi.org/10.1117/12.801691
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KEYWORDS
Reflectivity

Mirrors

Interferometers

Semiconductors

Nanostructures

Phase measurement

Refractive index

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