Ultra-narrow long green lines for laser crystallization of Si

Mikhail Ivanenko; Klaus Bagschik; Yuri Miklyaev; Alexei Mikhailov; Wyacheslaw Grimm; Vitalij Lissotschenko

doi:10.1117/12.808196

12 February 2009 Ultra-narrow long green lines for laser crystallization of Si

Mikhail Ivanenko, Klaus Bagschik, Yuri Miklyaev, Alexei Mikhailov, Wyacheslaw Grimm, Vitalij Lissotschenko

Proceedings Volume 7194, Laser Resonators and Beam Control XI; 719402 (2009) https://doi.org/10.1117/12.808196
Event: SPIE LASE: Lasers and Applications in Science and Engineering, 2009, San Jose, California, United States

Abstract

Advanced laser crystallization of Si films for large flat panel displays requires a narrow very homogeneous focus with at least 235 mm length and high depth of focus. Earlier we have reported on the development and application of an ultranarrow (5-9 μm) homogeneous line-shaped laser focus of 60 mm length for sequential lateral solidification (SLS) of Si. Key element of our line shaping system is an anisotropic mode transformation of the 2nd green harmonic of a Nd:YAG laser beam and its following homogenization for the long focus axis. The design and built-up of a much longer "green line" requires innovative optical approaches and very high precision optical manufacturing. We analyze in detail different process requirements, their physical compatibility (e.g. line width vs. depth of focus) and practical feasibility. To reach high energy densities in the long lines we design optical schemas bundling up to 8 beams of separate lasers.

Citation Download Citation

Mikhail Ivanenko, Klaus Bagschik, Yuri Miklyaev, Alexei Mikhailov, Wyacheslaw Grimm, and Vitalij Lissotschenko "Ultra-narrow long green lines for laser crystallization of Si", Proc. SPIE 7194, Laser Resonators and Beam Control XI, 719402 (12 February 2009); https://doi.org/10.1117/12.808196

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KEYWORDS

Laser crystals

Silicon

Pulsed laser operation

Crystals

Laser sintering

Optics manufacturing

Homogenization

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