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11 March 2009 Front Matter: Volume 7216
Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 721601 (2009) https://doi.org/10.1117/12.824588
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States
Abstract
This PDF file contains the front matter associated with SPIE Proceedings Volume 7216, including the Title Page, Copyright information, Table of Contents, Introduction, and the Conference Committee listing.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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"Front Matter: Volume 7216", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721601 (11 March 2009); https://doi.org/10.1117/12.824588
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KEYWORDS
Gallium nitride
Light emitting diodes
Field effect transistors
Heterojunctions
Aluminum nitride
Sensors
Fluctuations and noise
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