Staggered InGaN quantum well diode lasers emitting at 500 nm

Hongping Zhao; Ronald A. Arif; Nelson Tansu

doi:10.1117/12.808561

3 February 2009 Staggered InGaN quantum well diode lasers emitting at 500 nm

Hongping Zhao, Ronald A. Arif, Nelson Tansu

Proceedings Volume 7230, Novel In-Plane Semiconductor Lasers VIII; 72300G (2009) https://doi.org/10.1117/12.808561
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Staggered InGaN quantum wells (QWs) are analyzed as gain media for laser diodes to extend the lasing wavelength towards 500 nm. The calculation of band structure is based on a 6-band k•p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. Staggered InGaN QWs with two-layer and three-layer step-function like In-content InGaN QWs structures are investigated to enhance the optical gain for laser diodes emitting in the green regime.

Citation Download Citation

Hongping Zhao, Ronald A. Arif, and Nelson Tansu "Staggered InGaN quantum well diode lasers emitting at 500 nm", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300G (3 February 2009); https://doi.org/10.1117/12.808561

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available