Etch characterization of binary mask dependence on mask material and resist thickness for 22nm mask fabrication

Satoru Nemoto; Thomas Faure; Richard Wistrom; Shaun Crawford; Gary Reid; Peter Bartlau; Toru Komizo; Amy E. Zweber

doi:10.1117/12.824248

11 May 2009 Etch characterization of binary mask dependence on mask material and resist thickness for 22nm mask fabrication

Satoru Nemoto, Thomas Faure, Richard Wistrom, Shaun Crawford, Gary Reid, Peter Bartlau, Toru Komizo, Amy E. Zweber

Author Affiliations +

Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 737907 (2009) https://doi.org/10.1117/12.824248
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan

Abstract

Use of optical photomasks will extend to the 22-nm node and beyond. Mask minimum resolution and critical dimension (CD) requirements for this node are very challenging to the mask industry. Optimization of resist materials and resist thickness are key factors for improving CD performance. In general, thinner resists result in better minimum resolution performance. The minimum useable resist thickness is often linked to the chrome hard mask dry etching performance. More specifically, improvement of chrome etch rate selectivity to resist while simultaneously maintaining good CD performance is difficult. In order to use a very thin e-beam resist, the underlying chrome hard mask material thickness needs to be thin or it needs to be comprised of a material that has a fast etch rate and good dry etch selectivity to resist. Use of thin and/or fast etch rate hard mask materials that are capable of reducing dry etch induced CD error such as etch bias, etch bias uniformity, etch bias linearity, and etch global loading effect is required for meeting 22-nm mask requirements. In this paper, the dry etching effect dependence on hard mask thickness, hard mask material composition and resist thickness for building advanced binary masks for 22-nm node is studied. The results from this work will show that dry etch induced CD error such as etch bias, etch bias uniformity, etch bias linearity, and etch global loading effect are significantly improved by use of an ultra thin or high etch rate hard mask material.

Citation Download Citation

Satoru Nemoto, Thomas Faure, Richard Wistrom, Shaun Crawford, Gary Reid, Peter Bartlau, Toru Komizo, and Amy E. Zweber "Etch characterization of binary mask dependence on mask material and resist thickness for 22nm mask fabrication", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737907 (11 May 2009); https://doi.org/10.1117/12.824248

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