Accessing the epitaxy structure of quantum well infrared photodetectors by photoluminescence measurement

Nan Ma; Jun Deng; Dingyuan Li; Yanli Shi; Guangdi Shen

doi:10.1117/12.830954

4 August 2009 Accessing the epitaxy structure of quantum well infrared photodetectors by photoluminescence measurement

Nan Ma, Jun Deng, Dingyuan Li, Yanli Shi, Guangdi Shen

Proceedings Volume 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications; 738332 (2009) https://doi.org/10.1117/12.830954
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

In this paper, several samples of GaAs/AlGaAs multiple quantum well material with different parameters are present, the measurement result using photoluminescence(PL) spectroscopy shows the energy between the ground state in valence band and the ground state in conduction band of the well for each sample. Through transfer matrix method (TTM), we obtain bound state eigenvalues, and the corresponding eigenfunctions of arbitrarily graded in one-dimensional potential wells. With theoretical calculation, the peak response wavelength of the QWIP is determined. The calculated result is coincident with the one from photocurrent spectrum for the same sample very well. The comparison of theory and experiment confirms that PL scan is an important testing method for the quality of material.

Citation Download Citation

Nan Ma, Jun Deng, Dingyuan Li, Yanli Shi, and Guangdi Shen "Accessing the epitaxy structure of quantum well infrared photodetectors by photoluminescence measurement", Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 738332 (4 August 2009); https://doi.org/10.1117/12.830954

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