Fabrication of silicon photonic devices by utilizing industrial CMOS technology

Yong Zhao; Haifeng Zhou; Wanjun Wang; Jianyi Yang; Minghua Wang; Xiaoqing Jiang

doi:10.1117/12.840469

26 October 2009 Fabrication of silicon photonic devices by utilizing industrial CMOS technology

Yong Zhao, Haifeng Zhou, Wanjun Wang, Jianyi Yang, Minghua Wang, Xiaoqing Jiang

Proceedings Volume 7516, Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration; 751606 (2009) https://doi.org/10.1117/12.840469
Event: Photonics and Optoelectronics Meetings 2009, 2009, Wuhan, China

Abstract

Using 0.8μm industrial CMOS technology, a 1×2 optical switch based on the carrier dispersion effect was fabricated. The device employed the conventional P-I-N structure with a typical 1μm-wide waveguide. The main process flow is presented in detail. The switching extinction ratio and the speed of the 1×2 switch are 21dB and 20ns, respectively. The fabrication repeatability is stable and reliable.

Citation Download Citation

Yong Zhao, Haifeng Zhou, Wanjun Wang, Jianyi Yang, Minghua Wang, and Xiaoqing Jiang "Fabrication of silicon photonic devices by utilizing industrial CMOS technology", Proc. SPIE 7516, Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration, 751606 (26 October 2009); https://doi.org/10.1117/12.840469

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