Review of nitride infrared intersubband devices

Maria Tchernycheva; François H. Julien; Eva Monroy

doi:10.1117/12.840934

10 March 2010 Review of nitride infrared intersubband devices

Maria Tchernycheva, François H. Julien, Eva Monroy

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76021A (2010) https://doi.org/10.1117/12.840934
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We present a review of the intersubband optoelectronic technology based on GaN/AlGaN quantum wells or quantum dots. Three kinds of devices are discussed: intersubband light emitters, photodetectors and optical modulators. The operation principle, device performance and future developments are exposed.

Citation Download Citation

Maria Tchernycheva, François H. Julien, and Eva Monroy "Review of nitride infrared intersubband devices", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76021A (10 March 2010); https://doi.org/10.1117/12.840934

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