High-sensitivity visible and IR (1550nm) Si nanowire photodetectors

Hongkwon Kim; Arthur Zhang; James Cheng; Yu-Hwa Lo

doi:10.1117/12.847060

22 January 2010 High-sensitivity visible and IR (1550nm) Si nanowire photodetectors

Hongkwon Kim, Arthur Zhang, James Cheng, Yu-Hwa Lo

Proceedings Volume 7608, Quantum Sensing and Nanophotonic Devices VII; 76082F (2010) https://doi.org/10.1117/12.847060
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Vertical silicon nanowire detectors with high phototransistive gain have been demonstrated and the principles responsible for the high gain have been reported in recent publications. The emphasis of this paper is (a) the fabrication technology of silicon nanowire array detectors that can be integrated with Si VLSI and (b) the ability of sub-bandgap detection to achieve ultrawide band (from UV to IR) responsivity. We have demonstrated responsivity of greater than 100 A/W at 1550 nm for single crystal silicon nanowires to detect picowatts of IR light, the highest record ever reported for single crystal silicon detectors.

Citation Download Citation

Hongkwon Kim, Arthur Zhang, James Cheng, and Yu-Hwa Lo "High-sensitivity visible and IR (1550nm) Si nanowire photodetectors", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76082F (22 January 2010); https://doi.org/10.1117/12.847060

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available