Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs

T. Passow; R. Gutt; M. Maier; W. Pletschen; M. Kunzer; R. Schmidt; J. Wiegert; D. Luick; S. Liu; K. Köhler; J. Wagner

doi:10.1117/12.841968

11 February 2010 Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Köhler, J. Wagner

Proceedings Volume 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV; 76171I (2010) https://doi.org/10.1117/12.841968
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Reflective (thick) and semi-transparent (thin) Ni/Ag/Ni contacts were prepared on GaInN-based light-emitting diodes (LEDs) and p-GaN/p-Al_0.15Ga_0.85N layer sequences. A light output power enhancement of 41% and forward voltage reduction of 0.59 V were obtained compared to a Ni/Au contact for LEDs emitting at 400 nm with thick p-GaN contact layers. The specific contact resistance of the Ni/Ag/Ni contacts on p-GaN/p-Al_0.15Ga_0.85N with varying p-GaN thickness (5-20 nm) were determined by transmission line method and compared to Ni/Au contacts. Low resistive ohmic contacts were obtained for a p-GaN thickness of less than 10 nm. The p-GaN layer can be completely omitted for the reflective Ni/Ag/Ni contact. In addition, reflection and transmission of the Ni/Ag/Ni metallization schemes were investigated in the ultra-violet spectral range. Thick Ni/Ag/Ni and thin Ni/Ag/Ni covered by Al are promising to serve as reflective contacts for ultra-violet LEDs. The former for wavelength around 350 nm and the latter for wavelengths below 350 nm.

Citation Download Citation

T. Passow, R. Gutt, M. Maier, W. Pletschen, M. Kunzer, R. Schmidt, J. Wiegert, D. Luick, S. Liu, K. Köhler, and J. Wagner "Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs", Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76171I (11 February 2010); https://doi.org/10.1117/12.841968

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