A High Speed Nanometric Electron Beam Lithography System

T. Matsuzaka; N. Saitou; M. Okumura; G. Matsuoka; M. Ohyama

doi:10.1117/12.940376

30 June 1987 A High Speed Nanometric Electron Beam Lithography System

T. Matsuzaka, N. Saitou, M. Okumura, G. Matsuoka, M. Ohyama

Proceedings Volume 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI; (1987) https://doi.org/10.1117/12.940376
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

An electron beam lithography system has been developed for research and development of fine structure advanced devices. The system is capable of 0.1 um resolution, 0.04 um stitching accuracy, 0.04 um overlay accuracy and 1 wafer/hr throughput. One of key technologies used in this system is a variable gaussian optics and a pattern edging-process. This makes it possible to realize ten times higher throughput than the conventional fixed gaussian beam method and provide a simple means of proximity correction.

Citation Download Citation

T. Matsuzaka, N. Saitou, M. Okumura, G. Matsuoka, and M. Ohyama "A High Speed Nanometric Electron Beam Lithography System", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940376

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