Mössbauer measurements on SnSe2

I. Bibicu; A. Lőrinczi; M. Popescu

doi:10.1117/12.881773

3 December 2010 Mössbauer measurements on SnSe₂

I. Bibicu, A. Lőrinczi, M. Popescu

Proceedings Volume 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V; 78210K (2010) https://doi.org/10.1117/12.881773
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, 2010, Constanta, Romania

Abstract

Tin chalcogenides SnX₂ and SnX, where X = S, Se and Te present a particularly interest for their electronic properties and applications in gas sensors. The state of tin in these materials is important for understanding of the sensing effect and improvement of the sensor performances. Mössbauer spectroscopy is a widely used technique for the analysis of the local electronic structure or chemical bonding in solids. In this paper we applied Mössbauer technique for the investigation of bulk and thin films of SnSe₂ chalcogenide. The films of SnSe₂ chalcogenide were obtained by the methods: PLD ("Pulsed laser deposition") and PED ("Pulsed electron deposition"). Mössbauer measurements were performed by transmission (TMS), respectively conversion electron spectroscopy (CEMS). By CEMS spectroscopy surfaces, coatings and thin films containing Sn can be studied on substrates and to various depths up to 1000 nanometers.

Citation Download Citation

I. Bibicu, A. Lőrinczi, and M. Popescu "Mössbauer measurements on SnSe₂", Proc. SPIE 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V, 78210K (3 December 2010); https://doi.org/10.1117/12.881773

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