Advances in UV sensitive visible blind GaN-based APDs

Melville P. Ulmer; Ryan McClintock; Manijeh Razeghi

doi:10.1117/12.879942

24 January 2011 Advances in UV sensitive visible blind GaN-based APDs

Melville P. Ulmer, Ryan McClintock, Manijeh Razeghi

Proceedings Volume 7945, Quantum Sensing and Nanophotonic Devices VIII; 79451G (2011) https://doi.org/10.1117/12.879942
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

In this paper, we describe our current state-of-the-art process of making visible-blind APDs based on GaN. We have grown our material on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs are compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes. Single photon detection capabilities with over 30% are demonstrated. We show how with pulse height discrimination the Geiger-mode operation conditions can be optimized for enhanced SPDE versus dark counts.

Citation Download Citation

Melville P. Ulmer, Ryan McClintock, and Manijeh Razeghi "Advances in UV sensitive visible blind GaN-based APDs", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451G (24 January 2011); https://doi.org/10.1117/12.879942

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