Single photon emission from nitrogen delta-doped semiconductors

Hiroyuki Yaguchi

doi:10.1117/12.865770

24 January 2011 Single photon emission from nitrogen delta-doped semiconductors

Hiroyuki Yaguchi

Proceedings Volume 7945, Quantum Sensing and Nanophotonic Devices VIII; 79452F (2011) https://doi.org/10.1117/12.865770
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Isolated isolectronic traps in semiconductors are promising candidates for single-photon emitters because sharp emission lines with well-defined wavelengths are readily obtained. In this work, we study the emission from individual isoelectronic traps formed by nitrogen-nitrogen pairs in nitrogen delta (δ)-doped GaAs grown on (001) and (111)A substrates. We have found there is a remarkable difference in the polarization properties of luminescence for between (001) and (111) substrates, and successfully obtained unpolarized single photons by utilizing (111) substrate, which are desirable for the application to quantum cryptography. Unpolarized photons could also be obtained from nitrogen δ- doped GaAs/AlGaAs heterostructures grown on (001) substrates.

Citation Download Citation

Hiroyuki Yaguchi "Single photon emission from nitrogen delta-doped semiconductors", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79452F (24 January 2011); https://doi.org/10.1117/12.865770

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