Paper
20 April 1987 Monte Carlo Simulation Of The Growth Of ZnSe By MBE
R. Venkatasubramanian, N. Otsuka, S. Datta, L. A. Kolodziejski, R. L. Gunshor
Author Affiliations +
Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941008
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
A Monte Carlo study of the growth of ZnSe by molecular beam epitaxy is presented. The study is focused on the role of surface kinetic reactions in the growth of the epilayers. Two different models for the incorporation of Se molecules, one with a highly reactive physisorbed state and the other with a relatively nonreactive physisorbed state are employed for the simulations. It is shown that the structural quality of the epilayers is very sensitive to the flux ratio if the physisorbed state is relatively nonreactive. It is also shown that if the physisorbed state is highly reactive, good quality epilayers are obtained over a wide range of flux ratio. Based on the present study, it is suggested that the reactivity of the physisobed state can be investigated by comparing the results of the simulations with the reflection high energy electron diffraction observations of the surface of the growing film.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Venkatasubramanian, N. Otsuka, S. Datta, L. A. Kolodziejski, and R. L. Gunshor "Monte Carlo Simulation Of The Growth Of ZnSe By MBE", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941008
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Cited by 3 scholarly publications.
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KEYWORDS
Selenium

Zinc

Chemical species

Gallium arsenide

Monte Carlo methods

Chemisorption

Molecules

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