The enhanced photoresist shrink process technique toward 22nm node

Kenichi Oyama; Shohei Yamauchi; Kazuo Yabe; Arisa Hara; Sakurako Natori; Hidetami Yaegashi

doi:10.1117/12.878947

15 April 2011 The enhanced photoresist shrink process technique toward 22nm node

Kenichi Oyama, Shohei Yamauchi, Kazuo Yabe, Arisa Hara, Sakurako Natori, Hidetami Yaegashi

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79722Q (2011) https://doi.org/10.1117/12.878947
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

In fine patterning process technology, the pattern shrink process technique is indispensable in addition to pitch shrink. Tokyo Electron has previously demonstrated the application of this technique to trench-pattern shrink for dual trench LELE, simple hole shrink for the circular pattern, and rectangle pattern shrink for cut mask of SADP+line cut. In this paper, we introduce technology that can shrink photoresist for application to a short-trench and contact hole pattern. Using chemical shrink as a reference for comparison, we report on the effectiveness of TEL's original ALD SiO2 shrink process. In addition, we propose various contact pitch shrink schemes for applying double patterning technique.

Citation Download Citation

Kenichi Oyama, Shohei Yamauchi, Kazuo Yabe, Arisa Hara, Sakurako Natori, and Hidetami Yaegashi "The enhanced photoresist shrink process technique toward 22nm node", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722Q (15 April 2011); https://doi.org/10.1117/12.878947

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