Gradient-based fast source mask optimization (SMO)

Jue-Chin Yu; Peichen Yu

doi:10.1117/12.879441

22 March 2011 Gradient-based fast source mask optimization (SMO)

Jue-Chin Yu, Peichen Yu

Proceedings Volume 7973, Optical Microlithography XXIV; 797320 (2011) https://doi.org/10.1117/12.879441
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

As lithography still pushing toward to low-k1 region, resolution enhancement techniques (RETs) including source optimization (SO) and mask optimization (MO) are expected to overcome the fundamentally physics in optics. Recently inverse lithography (IL) is widely studied for source and mask optimization (SMO) to enhance the resolution for over diffraction limit integrate circuit (IC) patterns. In this paper, we propose a gradient based SMO algorithm where the SO and MO are two sequential steps due to their different image formation mechanism. Moreover, we employ three cost functions including aerial and resist image and the image contrast which is proposed in our previous work. We show that IL patterns produced by SMO have better pattern fidelity and image contrast than MO only patterns.

Citation Download Citation

Jue-Chin Yu and Peichen Yu "Gradient-based fast source mask optimization (SMO)", Proc. SPIE 7973, Optical Microlithography XXIV, 797320 (22 March 2011); https://doi.org/10.1117/12.879441

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